RU / EN

Issue №6, 2002 г.

PHOTOELECTRONICS

XVII International scientific and engineering conference on photoelectronics and night vision devices
The authors: Filachev A. M.
7
Hundred years from the birthday of P. V. Timofeev
The authors: Perevodchikov V. I.
10
Photoelectronics for new generation of electron-optical equipment
The authors: Ponomarenko V. P., Filachev A. M.
13
The state of the art and prospects of CdxHg1-xTe molecular beam epitaxy
The authors: Varavin V. S., Gutakovsky A. K., Dvoretsky S. A., Kartashev V. A., Latyshev A. V., Mikhailov N. N., Pridachin D. N., Remestnik V. G., Rukhlitsky S. V., Sabinina I. V., Sidorov Yu. G., Titov V. P., Shvetz V. A., Yakushev M. V., Aseev A. L.
25
State and perspectives of develop-ments of chilled IR focal plane arrays for a dual purpose at the Electron Central Research Institute
The authors: Arutyunov V. A., Vasil’ev I. S., Ivanov V. G., Prokof’ev A. E.
42
Photodetectors and photodetective assemblies for 0.3-11-µm spectral range
The authors: Filachev A. M., Ponomarenko V. P., Taubkin I. I., Burlakov I. D., Boltar K. O., Gorelik L. I., Kravtchenko N. V., Kulymanov A. V., Kulikov K. M., Lozhnikov V. E., Sharonov Yu. P.
52
Orientantion of photodetectors on op-toelectronic information test system for night vision
The authors: Gorbachenya N. K., Zotikov A. F., Novichenkov V. Yu.
61
Threshold Characteristics of IR-photodetectors on base of PtSi-p-Si Schottky barriers with sur-face highly-doped layer
The authors: Voitsekhovskii A. V., Kokhanenko A. P., Nesmelov S. N., Lyapunov S. I., Komarov N. V., Niciphorov A. Yu.
67
Influence of the ionizing irradiation on the basic characteristics of cooled photoresistors on the CdxHg1-xTe basis
The authors: Salayev E. Yu., Abdinov D. Sh., Askerov K. A.
74
State of works and development prospects of thermoelectric cooling for photoe-lectric semiconductor detectors
The authors: Arakelov G. A.
78
Three-stage thermoelecrtical module for ~200 K temperature level
The authors: Alieva T. D., Akhundova N. M., Abdinov D. Sh.
85
Material on the basis of PbTe for p-branches of thermoelectric coolers
The authors: Agayev Z. F., Allahverdiyev E. A., Murtuzov G. M., Abdinov D. Sh.
87
Image merging device
The authors: I. V. Borisova, V. N. Gorenok, A. N. Oparin, P. G. Popov
89
Infrared photoreceiver on the basiс of the structure with quan-tum wires
The authors: Huserynov E. K., Salmanov V. M.
94
Laser-holographic measuring complex
The authors: Ivanov V. P, Lukin A. V., Melnikov A. N.
99
Photodiode structures on the manganese—mercury—tellurium basis
The authors: Rizhkov V. N., Ibragimova M. I., Aleeva N. V., Chaschin S. P., Nesmelova I. M., Andreev V. A.
106
About possibility of using universal controller for electrome-chanical executive subsystems of robotics in the manufacture of photoelectro- nics product
The authors: Mikhalev A. S., Mikhalevsky M. V.
110
Simulators of dynamic thermal fields for bench tests of IR im-ager systems
The authors: Stefanov V. A., Kravchenko V. S.
115
The influence of the ion etching on parameters of the CdHgTe photoconductors
The authors: Filatov A. V., Looksha V. I., Popovyan G. E., Troshkin U. S., Sharonov U. P.
129