M. A. Demyanenko, I. V. Marchishin, A. G. Klimenko, A. I. Kozlov, V. N. Ovsyuk, A. P. Savchenko, A. I. Toropov, V. V. Shashkin
Institute Semiconductor Physics, Novosibirsk, Russia
Results of the development 128x128 pixels long IR region photodetector array are produced. The fabrication involves hybridizig GaAs/AlGaAs MQW chips to CМOS readout chips. Temperature resolution NETD — 0,067 K at operating temperature 65 K.
