V. I. Shashkin, A. V. Antonov, V. M. Daniltsev, M. N. Drozdov, Yu. N. Drozdov, D. M. Gaponova,
A. Yu. Lukyanov, L. D. Moldavskaya, A. V. Murel, O. I. Khrykin, A. N. Yablonsky
Institute for Physics of Microstructures, Russian Acadeny of Sciences, Nizhny Novgorod, Russia
V. S. Tulovichikov
NNSU, Nizhny Novgorod, Russia
Self-assembled InGaAs/GaAs quantum dots multilayer structures were grown by low-pressure metalorganic chemical vapor deposition for investigation of infrared photoconductivity (PC). Normal incidence lateral photoconductivity was observed in the temperature range from 4.2 K to 120 K. At low temperatures the PC peak near 16 mm was dominated, at higher temperatures the only peak near 5 mm was observed. The detector responsivity was increased by one hundred times with decreasing chopper IR radiation frequency from 1 kHz to 10 Hz.
