RU / EN

Issue №4, 2014 г.

GENERAL PHYSICS

Calculation of the characteristics electron transport in a mixture of helium and xenon
The authors: R. I. Golyatina and S. A. Maiorov
5
Thin film of nano-dimensional carbon deposition on the metallic samples as a multipactor prevention method
The authors: A. M. Anpilov, E. M. Barkhudarov, I. A. Kossyi, G. S. Luk’yanchikov, M. A. Misakyan, and I. V. Moryakov
11
Diffusion of ions in the electrolyte under the influence of random current
The authors: A. N. Morozov and A. V. Skripkin
16

PLASMA PHYSICS AND PLASMA METHODS

Electric breakdown under the spread of pulsed current in a sand
The authors: L. M. Vasilyak, S. P. Vetchinin, V. N. Panov, V. Ya. Pecherkin, and E. E. Son
20
Method of radiation spectrum control for plasma relativistic microwave oscillator in repetitively-rated regime
The authors: S. E. Andreev and D. K. Ulyanov
26
Моделирование режимов работы плазменной антенны
The authors: N. N. Bogachev, I. L. Bogdankevich, and N. G. Gusein-zade
30
About influence of an exterior magnetic field on stability of an electric arc
The authors: V. O. German, A. P. Glinov, A. P. Golovin, and P. V. Kozlov
35
Simulation of gas flow in the cylindrical channels of high-voltage AC plasma torches subject to heating
The authors: A. M. Borovskoi
40
The investigation of admittance of MIS-structures based on graded-gap MBE n-HgCdTe (x = 0.22—0.23 and 0.31—0.32) in wide temperature range
The authors: A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov
56

PHOTOELECTRONICS

Research of photodiodes with a leakage current in the InSb FPA
The authors: K. O. Boltar, P. V. Vlasov, V. V. Eroshenkov, and A. A. Lopuhin
45
Effects of ion-beam etching at formation of mesa-structures with the submicron sizes
The authors: M. V. Sednev, K. O. Boltar, Y. P. Sharonov, and A. A. Lopukhin
51
The peculiarities of admittance of MIS structures based on graded-gap MBE p-HgCdTe (x = 0.22—0.23)
The authors: A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, V. V. Vasil`ev, V. S. Varavin, S. A. Dvoretskii, N. N. Mikhailov, V. D. Kuzmin, V. G. Remesnik, and Yu. G. Sidorov
62
Influence of parameters of a semiconductor-dielectric border on the current of a guard ring for silicon photodiodes
The authors: S. S. Demidov and E. A. Klimanov
68
The coordinate silicon photodiode with improved parameters
The authors: S. S. Demidov, E. A. Klimanov, and M. A. Nuri
73
Investigation of influence the heat processing time on electrophysical characteristics of CdхHg1-хTe multilayered structures
The authors: A. S. Kashuba, C. V. Golovin, K. O. Boltar, E. V. Permikina, and A. S. Atrashkov
76
The surface roughness investigation of CdZnTe substrates by different measuring methods of nanometer accuracy
The authors: I. D. Burlakov, I. А. Denisov, A. L. Sizov, А. А. Silina, and N. А. Smirnova
80
Influence of plasma etching and following storage on the CdHgTe electrical properties
The authors: B. A. Kostiuk, V. S. Varavin, I. O. Parm, V. G. Remesnik, and G. Y. Sidorov
85
Forming of the general contact in a mesaplanar FPA on basis of the InGaAs/InP heteroepitaxial structures
The authors: D. S. Andreev, T. N. Grishina, T. N. Mishchenkova, M. A. Trishenkov, and I. V. Chinareva
90
Spectral absorption characteristics in epitaxial structures based on InAs at temperatures of 80 K and 300 K
The authors: O. S. Komkov, D. D. Firsov, E. A. Kovalishina and A. S. Petrov
93

PHYSICAL APPARATUS AND ITS ELEMENTS

Laser accelerometer on base of the autonomous resonator sensor
The authors: B. V. Melkoumian
97

INFORMATION

Rules for authors
The authors:
102