V.P. Astakhov, D.A. Gindin, V.V. Karpov, G.S. Solovjeva, A.V. Talimov
Joint Stock Company “Moscovskiy Zavod “Sapfir”, Moscow, Russia
Yu.R. Vinetski, A.G. Titov, V.I. Famitski
State Unitary Enterprise “RD&P Center “Orion”, Moscow, Russia
ABSTRACT
The results are presented of technological investigations in basic technology so as very low dark current level <-3*10-11A of the photodetectors is achievable. The results permits InSb photodetectors to be used effectively in low-background 3….5 mkm band systems to realize close-to-back ground-limited performance.
