B. N. Vasichev, S. A. Disman
Moskow Institute Electronics and Mathematics (Technical university), Moskow, Russia
E. P. Bocharov, V. T. Savukov
Research Institutе for Electronics and ion optics, Moskow, Rissia
It is showed electron-beam metod control and analisis semi-conductor structures on capasity for work and rejection. The description of device for control of materials and wares by method of inducced current is given.
