V. S. Varavin, A. K. Gutakovsky, S. A. Dvoretsky, V. A. Kartashev, A. V. Latyshev, N. N. Mikhailov, D. N. Pridachin, V. G. Remestnik, S. V. Rukhlitsky, I. V. Sabinina, Yu. G. Si-dorov, V. P. Titov, V. A. Shvetz, M. V. Yakushev, A. L. Aseev
Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
Molecular beam epitaxy of MCT makes it possible to dissolve the problems of producing MCT het-eroepitaxial structures with uniformity parameters on the large size alternative substrates for IR PD of existent and new generation and the growing of MCT layers on Si-substrates. The information about characteristics of geteroepitaxial structures on GaAs-substrates, a new generation equipment for controlled growing of MCT layers by MBE and technological conditions allowed to grow the epitaxial buffer CdTe layers on Si-substrates are represented in this work.
