P. Yu. Pak, V. A. Fateev, V. V. Shashkin
Institute for Physics of Semiconductors, Novosibirsk, Russia
The method of the scanning laser microscopy (SLM) was applied for examination of a spatial distribution of the electrically active areas in the MBE MCT layers with compositions of x = 0.22 and x = 0.3, and also in arrays of MCT planar photodiodes. The correlation between results of SLM examination of a piece of an planar photodiodes array and their volt-ampere characteristics is detected. Character of allocation of electrical inhomogeneities in a volume of an MCT epifilm is investigated with the help of a level-by-level release. Comparison of the SLM image of a MBE MCT piece with lateral views of a spatial distribution of concentration of background impurities (C, Cu, As, Li), obtained with the help of a procedure of a secondary ionic mass spectroscopy (SIMS), allows to speak about a correlation of attitude of electrical inhomogeneities with a spatial distribution of background impurities.
