V. M. Bazovkin, N. A. Valisheva, A. A. Guzev, V. M. Efimov, A. P. Kovchavtzev, G. L. Kuryshev, I. I. Lee, A. S. Stroganov.
Institute of Semiconductors Physics, Siberian Brunch of Russian Academy of Science, Novosibirsk, Russia
Technology and design of the linear 1x384 MIS photodetectors on the InAs homoepitaxial substrate are developed. The experimental results IR focal plane arrays (IR FPA) intended for rapid IR spectrometers with time registrations 0,1—50 ms are presented.
