V. P. Astakhov, I. A. Bolesov, E. F. Karpenko, V. V. Karpov, P. I. Lapin, K. V. Sorokin, N. V. Filippenko
Joint Stock Company «Moscow Plant “Sapphire”», Moscow, Russia
In this work the n+-p-junctions periphery treatment influence of nitrogen molecular ions implantant on 8-quadrant pin-photodiodes with a guard ring volt-current characteristics is investigated. The implantant treatment carried out after removal of a film SiO2 or boron doping by implantation, or mesa-etching. It is shown, that the best reverse volt-current characteristics corresponds to the case of treatment by nitrogen ions after p-areas surface doping.
