I. B. Chistokhin, I. P. Michailovsky, B. I. Fomin, E. I. Cherepov
Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, Russia
Polycrystalline layers of Si1-xGex, of varying germanium fraction, in situ doped with boron, were received by molecular-beam deposition on layers of the silicon oxide and silicon nitride at temperatures < 500 °C. The structural properties of the films were studied, the dependences of the resistivity on the temperature and the low-frequency noise were measured. It has been demonstrated that, the temperature coefficient of resistance in poly SiGe deposited on different dielectric coverings amounts to (3—4) % and depends on resistance and grain size.
