V. M. Akimov, K. O. Boltar, Ye. A. Klimanov, V. P. Lisakin, A. P. Mikertumyants, L. D. Saginov, A. A. Timofeev, V. M. Ungerman
ORION Research-and-Production Association, Moscow, Russia
Development results of cooled silicon 64x64, 128x128, 384x288 MOS-multiplexers for “staring” matrix photodetective assemblies (MPDA) based on CdxHg1-хTe and InSb photodiodes (PD) are given. Main electric and design parameters of developed devices are given.
