A. M. Filachev
State Scientific Center “Orion”, Moscow, Russia
B. N. Vasichev
Moscow Institute for Electronics and Mathematics (Technical University), Moscow, Russia
I. S. Makarowa, L. B. Rozenfeld, E. E. Chernova-Stoljarova
Research Institute for Electron and ion Optics, Russia
Possibility of using СВЭМ-1 for a inserting of radiation defects in investigating materials was considered. Parameters of illuminating system СВЭМ-1 (accelerating voltage Ј 2 МэВ) was calculated. Considered two variants of influence on the object: irradiation by the focused electron beam or irradiation by x-ray radiation, agitated by this electron beam. Shown that in СВЭМ-1 possible get density of power of dose to 2,5Ч 107 Gr/mm2Ч s. Herewith specific density of power of x-ray radiating, created by the electron beam, can reach 3,3Ч 106 W/mm2.
