I.D. Anisimova, V.I. Stafeev
State Unitary Enterprise “RD&P Center “Orion”, Moscow, Russia
ABSTRACT
We reported on the fabrication and characterization of ultraviolet photodetectors with Schottky barrier based on semiconductors GaP, GaPxAs1-x, GaAs. As row materials are used n-n+- n type epitaxial structures. The general parameters of the photodetectors have been demonstrated.
