E. Yu. Salaev, H. R. Nuriev, Kh. D. Jalilova, N. V. Faradjev
Institute of Fotoelectronics Azerbaijan Academy of Sciences, Baku, Azerbaijan
The optical absorption edge on the indium-doped (NIn <= 0,8 weight. %) Pb1-xSnxSe (x = 0,07) epitaxial layers have been investigated. The observered movement of intrinsic absorption edge in the short-wave length region spectrum is interpretated by the presence of indium impurity, which lead to some increading of gap with Eg in Pb1-xSnxSe. It has been found, that the inter-zone absorption edge in the weak absorption region Pb1-xSnxSe is conditioned by nondirect optic transitions. The magnitudes of Eg and dEg/dT have been calculated and are described by (K)½=f(E) curve.
