Yu. M. Degot, O. N. Zabenkin, N. N. Kichina, N. V. Kravchenko, A. V. Kulymanov, Yu. V. Lobikov, O. V. Ogneva, M. A. Trishenkov, P. E. Khakua-shev, I. V. Chinareva
FSUE “NPO “Orion”, Moscow, Russia
O. N. Smolensky-Suvorov
S. A. Zverev Krasnogorsk Plant, Krasnogorsk, Russia
Technology and design of a multi-element germanium photodetector have been developed. The topology of the photosensitive pads is a Gray code mask, so that when the strip is irradiated, a binary four-bit code signal is output from the device with the corresponding external electronics. The device features a large photosensitive area of ~ 60 mm2 and an extended spectral sensitivity range (compared to existing silicon systems) of up to 0.8…1.55 μm.
