Article: Temperatures dependence of current transport in Shottky diodes at the absence of edges effects

R. K. Mamedov
Baku State University, Baku, Azerbaijan Republic

Temperatures dependence of current transport in Ni-nSi Schottky diodes with different diameters (10—1000 mkm) at the absence of edges effects in the temperatures interval 222—387 K Study has shown that satisfactory type an current-voltage characteristic of Schottky diodes is saved in limited temperatures intervals. The particularities of temperatures depen- dence of barrier height, non-ideality factor, contact resistance, non-dimensional factor and other parameters of Schottky diodes depends on the chosen temperatures intervals.