V. J. Kavych, M. I. Lozynska, L. G. Mansurov
Ivan Franko National University of Lviv, Lviv, Ukraine
We have demonstrated the feasibility of growing the MCMT single crystal layers (Eg = 0,14–0,17 eV) on CdTe (110) substrates by reactive deposition in RF mercury glow discharge. The specific values of the Ts at the range from 220 to 250 °C lead to epitaxial growth of the MCMT layers. After two-stage treatment in Hg overpressure the MCMT layeers have the anomalous high values of the hole mobility (up to 1500 cm/VЧs).
